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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2412
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS
(in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2
FEATURES
* Low On-Resistance
RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A)
15.0 0.3 3 0.1 4 0.2 12.0 0.2 13.5 MIN.
RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 10 A)
* Low Ciss Ciss = 860 pF TYP. * Built-in G-S Gate Protection Diodes * High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
0.7 0.1 2.54
1.3 0.2 1.5 0.2 2.54 0.65 0.1
2.5 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) 60 20 20 80 30 2.0 150 20 22.5 V V A A W W C A mJ
Gate 123
1. Gate 2. Drain 3. Source
MP-45F(ISOLATED TO-220)
Drain
Total Power Dissipation (Tc = 25 C) PT1 Total Power Dissipation (TA = 25 C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % Tch Tstg IAS EAS
-55 to +150 C
Body Diode
Gate Protection Diode Source
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
The information in this document is subject to change without notice. Document No. TC-2493 (O. D. No. TC-8031) Date Published November 1994 P Printed in Japan
(c)
1994
2SK2412
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 860 440 110 15 120 70 50 27 2.7 8.9 1.2 120 350 1.0 7.0 MIN. TYP. 50 67 1.6 15 10 10 MAX. 70 95 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 10 A VGS = 4 V, ID = 10 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 20 A VDD = 48 V VGS = 10 V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 di/dt = 100 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T. RG = 25 PG VGS = 20 0 V IAS ID VDD BVDSS VDS VGS 0 t 50 L VDD PG.
D.U.T. RG RG = 10
VGS VGS VGS (on) Wave 010 % Form VDD 90 % ID ID Wave Form
10 % 0 td (on) ton tr
RL
90 %
90 % 10 %
ID
td (off) toff tf
t = 1s Duty Cycle 1 % Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50 RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2412
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 50 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
40
60
30
40
20
20
10
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse) 80
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 60 VGS = 10 V VGS = 6 V
PW =
ID - Drain Current - A
ID - Drain Current - A
10
d ite V) im 10 ID (DC) L n) (o S = DS VG Rt (a
10
10 0
s
s
40 VGS = 4 V 20
1
Tc = 25 C Single Pulse 0.1 1
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V ID - Drain Current - A 100
Po
1 m
w er Di ss ip at io n Li m
DC
10
TA = -25 C 25 C 125 C
10 m
s
s
20 0 m s
ite d
10 100 0 2 4 6 8 10 12 VDS - Drain to Source Voltage - V
1 0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
3
2SK2412
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth (t) - Transient Thermal Resistance - C/w
100
Rth (ch-a) = 62.5 C/W 10 Rth (ch-c) = 4.17 C/W 1
0.1
0.01 10
Single Pulse 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
|yfs| - Forward Transfer Admittance - S
100
RDS (on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed TA = -25 25 75 125 10 C C C C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 Pulsed 100 80 60 40 20 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID = 10 A
1 0 1 10 100 ID - Drain Current - A
RDS (on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 100 80 60 VGS = 10 V 40 20 0 VGS (off) - Gate to Source Cutoff Voltage - V Pulsed 2.0
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA
1.5
VGS = 4 V
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
1
10 ID - Drain Current - A
100
Tch - Channel Temperature - C
4
2SK2412
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 100 VGS = 4 V 80 60 40 20 ID = 10 A 0
-50 -25 0 25 50 75 100 125 150
RDS (on) - Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 ISD - Diode Forward Current - A Pulsed
10 10 V VGS = 0 1
VGS = 10 V
0.1 0 1.0 2.0 3.0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td (on), tr, td (off), tf - Switching Time - ns VGS = 0 f = 1 MHz 1000
SWITCHING CHARACTERISTICS
1000
Ciss Coss Crss
100 tf 10
td (off)
tr
100
td (on)
10 1 10 VDS - Drain to Source Voltage - V 100
1.0 0.1 1.0 10 ID - Drain Current - A
VDD = 30 V VGS = 10 V RG = 10 100
REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Diode - ns 80 70 60 50 40 30 20 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS ID = 20 A 16 VDD = 48 V 14 VGS 12 10 8 6 4 2 0 0 10 20 30 40
VDS
10 0.1
di/dt = 50 A/ s VGS = 0 1.0 10 100
ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
5
2SK2412
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Energy - mJ dt - Energy Derating Factor - % 120 100 80 60 40 20 0 25 VDD = 30 V RG = 25 VGS = 20 V 0 IAS 20 A SINGLE AVALANCHE ENERGY DERATING FACTOR
IAS = 20 A 10
EA
S
=
22
.5
mJ
VDD = 30 V VGS = 20 V 0 1.0 RG = 25 10 100
1m
10 m
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
2SK2412
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2412
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6

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